System for optimizing anti-fuse repair time using fuse id

ABSTRACT

A method and apparatus for testing semiconductor memory chips, such as DRAMs, having a plurality of memory cells or bits. Each memory chip has a unique identifier stored in a database. Tests are performed on the memory chips and when a memory chip fails a test, the memory chip is placed in a repair bin and a test identifier is stored in the database in association with the memory chip identifier. In order to repair the memory chip, failed tests are read out of the database and such tests are again performed on the failed memory chip in order to determine which memory cell in the memory chip is faulty. The failed memory cells are then repaired.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of Ser. No. 10/013,684, filed Dec.13, 2001 now U.S. Pat. No. 6,622,270, which is a continuation of Ser.No. 09/612,098, filed Jul. 7, 2000, now U.S. Pat. No. 6,347,386, whichin turn is a continuation of Ser. No. 09/150,289, filed Sep. 9, 1998,now U.S. Pat. No. 6,128,756, which in turn is a continuation of Ser. No.08/693,750, filed Aug. 7, 1996, now U.S. Pat. No. 5,867,505, thedisclosure of which is herewith incorporated by reference in itsentirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to the field of testing asemiconductor memory chip and more specifically to optimizing repairtime using a fuse identifier associated with the semiconductor memorychip.

2. Discussion of the Related Art

In order to ensure that a semiconductor device, such as a DRAM, isreliable, multiple tests are performed on the device before and afterpackaging.

A DRAM includes an array of memory cells or bits in rows and columns.After packaging, a plurality of tests are performed on the device inorder to determine whether there is a defect in the array of bits thatwill fail over time. For example, burn-in testing is performed toaccelerate failure using voltage and temperature stress. When a failedmemory cell is detected, the row or column in which the failed memorycell is located is substituted by a redundant row or column,respectively. After packaging, this substitution is performed usingantifuses in the memory chip.

Antifuses are capacitors including two conductive layers spaced by athin insulative material, such as silicon nitride. Under normal biasingconditions, no DC current flows through the antifuse. Upon applicationof an excessive bias across the two conductive layers, however, the thininsulative material breaks down, thereby shorting the two conductivelayers. Thus, redundant memory elements coupled to the antifuses can beselectively connected to circuiting external to the memory array byapplying the excessive bias to-desired antifuses.

If a memory chip-fails any one of the tests, it is placed in a failurebin and becomes a candidate for antifuse repair. During the repair step,redundancy analysis is performed on each of the failed memory chipswhich involves repeating tests in order to identify specific bits thathave failed. Once a failed bit is located, either the entire row orcolumn in which it is located is replaced with a corresponding redundantrow or column. Redundancy analysis has half the throughput of theinitial testing analysis because the initial analysis typically tests 64sites wide on a chip such as 16M DRAM while redundancy analysis onlytests 32 sites wide on the memory chip.

Due to the relatively large amount of time required to performredundancy analysis, only a subset of tests are run, such as the tenmost commonly failed tests. However, faulty memory cells in chipsfailing tests not among these top ten failing tests will not be detectedand repaired during redundancy analysis.

SUMMARY OF THE INVENTION

In accordance with the purpose of the invention, as embodied and broadlydescribed herein, a method is provided for testing integrated circuitsor semiconductor memory chips, such as DRAMs, having a plurality of bitsor memory cells. Each memory chip has a unique identifier, preferably afuse identifier having a series of selectively blown fuses correspondingto a unique binary number, located on the memory chip. The informationcontained in the fuse identifier is also stored in a database. Tests areperformed on the memory chips and when a memory chip fails a test, thememory chip is placed in a repair bin and the failed test identifier isstored in the database with the associated memory chip identifier. Inorder to repair the memory chip, failed test data are read out of thedatabase and only selected tests which the chips failed are againperformed on the failed memory chip in order to determine which bit inthe memory chip is faulty. The failed bits are then repaired preferablyby substitution of redundant rows or columns.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate an embodiment of the inventionand, together with the description, serve to explain the advantages andprinciples of the invention. In the drawings,

FIG. 1 is a block diagram of the system for testing memory chip;

FIG. 2 a shows a flow chart of the steps for performing an example testselection according to one implementation of the present invention;

FIG. 2 b shows a flow chart of the steps for performing an example testselection according to another implementation of the present invention;and

FIG. 3 shows an example PRAM test flow according to the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the construction and operationof preferred implementations of the present invention which areillustrated in the accompanying drawings.

FIG. 1 shows a block diagram of the memory chip or integrated circuittesting system in accordance with the present invention. Testing device100 performs tests on a group of semiconductor memory chips 140,simultaneously. Preferably, 64 chips are tested at a time. Each memorychip has a unique identifier, preferably a fuse identifier having aseries of selectively blown fuses corresponding to a unique binarynumber, located on the memory chip. Processor 110 oversees the testingperformed by the testing device 100 and communicates with memory 120that stores procedures for performing a variety of functions such asthose outlined in the flow charts shown in FIGS. 2–4. In performingthese procedures, the processor 110 accesses a database 130 that storesfuse identifiers in conjunction with test identifiers that identifytests that a specific memory chip failed.

In a preferred embodiment the database includes data in a format asshown below in Table 1. The first field indicates the number of teststhat a memory chip failed, a plurality of fields list test numbersdesignating specific tests which the chip failed and the final fieldindicates the unique fuse identifier.

TABLE 1 Tests Failed Fuse Identifier Memory Chip 1 3 22 34 79 12345:12:1Memory Chip 2 1 88 12345:12:2 Memory Chip 3 4 22 33 34 79 12345:12:3Memory Chip 4 3 22 34 80 12345:12:4

Using the example shown in Table 1 the benefits of the present inventionwill be further described. Using the system described in the Backgroundof the Invention, after faulty memory chips have been set aside forrepair, frequently failed tests, not necessarily actually failed tests,are rerun on the memory chips in order to determine the specific bitsthat may be faulty. If tests 22, 34, 35, 79, and 80 are considered themost commonly failed tests then memory chip 2 will not be repairedbecause it does not include any bits that will fail the listed tests.

In the repair step in accordance-with the present invention, a betterset of tests will be selected that only includes tests actually failed.This set of tests saves time because fewer tests need to be run and itallows for a more accurate repair. A detailed description of the testingand repair of semiconductor chips in accordance with the presentinvention will be set forth below.

First, preferably a group of 64 memory chips is tested beginning with afirst test (step 200). If any one of these memory chips fails this test(step 205), a test identifier that identifies the failed test is storedin the database in the Tests Failed Field in conjunction with the fuseidentifiers listed in the Fuse Identifier field for the correspondingfailed memory chip(s) (step 210). Next, if none of the memory chipsfailed or after storing the failed test identifiers, the systemdetermines whether another test needs to be performed (step 215). If so,the group of memory chips-are passed through steps 200–215 until notests remain. The defective chips are then set aside (step 217). Anothergroup of 64 chips is then tested and passed through steps 200–215.Defective chips are set aside, and the testing of successive groups ofchips continues until all chips have been tested and all defective chipshave been set aside and identified. The process then continues with step220.

In one implementation of the present invention, tests that were failedby a group of the defective memory chips, are ranked beginning with themost failed test (step 220). The highest ranked test in the group isselected to be placed in a set of tests to be repeated on the memorychips (step 225). Tests failed by chips in the group that did not failthe highest ranked test, are then ranked again (step 230). The highestranked test among these remaining tests is also selected and inserted inthe set of tests to be repeated (step 235). If any of the defectivememory chips in the group did not fail one of the tests in the set oftests to be repeated (step 240), then steps 230–235 are repeated untilthe set of tests includes at least one test failed by each defectivememory chip. The final set of tests are then repeated on the defectivememory chips of the group (step 245). Preferably, 32 defective memorychips are included in each group.

In another implementation, shown in FIG. 2 b, re-testing time isminimized. After each of the memory chips have been tested (step 215),the database includes a plurality of sets of failed tests for eachfailed chip of a group to be repaired such as those shown in Table 1. Aplurality of combinations of tests are generated, wherein eachcombination incudes at least one of the tests in each set of failedtests (step 255). For example, a few combinations of tests to begenerated from Table 1 include, for example (3, 1, 4, and 80); (3, 88,4, and 80); (3, 1, and 22); (22 and 88); and (34 and 88). An amount oftime required to perform each test is known. Therefore, the timerequired to perform each combination of tests may be calculated bysumming the time required for the individual tests (step 260). Thecombination of tests that requires the least amount of time is thenselected (step 265). For instance, the set of tests 22 and 88 will berun instead of tests 34 and 88 when the time required to perform test 22is less than the time required to perform test 34. The selectedcombination of tests are performed on each of the defective memory chipsin the group (step 270).

The above-described selection of tests is repeated for successive groupsuntil all defective chips have been repaired.

As discussed below, a set of tests is repeated on the memory chip inorder to determine the location of defective bits or memory cells on thememory chips. Time will be saved because tests that were not failed byany of the memory chips will not be repeated. Nor will overlapping testsbe run, such as when a plurality of memory chips all fail a common test,only that common test need be repeated.

FIG. 3 shows an example DRAM test flow according to the presentinvention that begins by testing a memory chip using a hot pregrade step(step 300). The hot pregrade step involves performing tests such asspeed grading, complex margin testing, and parametric testing all ofwhich are performed at a temperature around 85° C. on a testingapparatus such as a circuit tester manufactured by Teradyne, Inc. Asnoted above, preferably, a group of 64 memory chips are tested at atime.

Margin testing is performed to determine the functionality of a memorychip and to determine what effect voltage has on the write and readfunctions of the memory chip. This test involves writing to a memorycell in a memory chip and reading from that same cell at a variety ofvery low and high voltages.

If it is determined that the memory chip failed any one of these tests(step 305), then the failed test numbers are stored in database 130(step 210), and the memory chip is placed in a repair bin (step 345). Ifthere are any other chips to be tested (step 215) then the next test isperformed (step 217) and processing continues with step 300. Otherwise,tests are selected, using criteria such as that discussed above, andrepeated (step 350). Any detected failed bits or memory cells areidentified and hot repaired (step 355).

A memory chip that successfully passed the hot pregrade tests (step 300)is then further tested using burn-in tests (step 310) such as functionaltesting, and “infant mortality” stress which is preferably carried outfor about 80 hours at a temperature of about 127° C. Infant mortalitiesare chip failures that occur under voltage or temperature stress. Memorychips include a polysilicon layer that may break off and crossconductive portions on the chip. An oxide layer can form between thebroken off piece of the polysilicon layer and the conductive portionssuch that the conductive portions remain isolated. However, undervoltage or temperature stress the oxide layer breaks down causing thepolysilicon layer to short the conductive portions together. Therefore,by applying voltage or temperature stress to the chip, these failuresare detected. Cold-burn testing may also be carried out with margintesting and functional testing at −10° C. to 85° C.

During the burn-in step (step 310), functional testing is performed bypromoting failure using voltage and temperature stress. When it isdetermined that the memory chip fails any of the burn-in tests (step315), then processing continues with step 210 as discussed above.Otherwise, the hot final tests are performed (step 320) for speedverification. These tests include complex margin testing, parametrictesting, and are all preferably performed at 85° C. on a testingapparatus such as one circuit tester manufactured by Teradyne, Inc. Whena memory chip fails any of the hot final tests (step 320), thenprocessing continues with step 210 as discussed above.

Otherwise, testing continues with the cold final tests (step 330) thatare also for speed verification and include complex margin testing,parametric testing, all performed preferably at −5° C. on theabove-described Teradyne circuit tester.

Hot final and cold final testing are similar speed tests used todetermine whether a memory chip has acceptable access times for thebits, the only difference being the temperature at which these tests arecarried out. In order to determine how fast a chip is, the testingincludes writing to a bit address and a set period of time later,attempting to read that address to determine whether the data is there.If the data is not there, then the memory chip fails this test.

When a memory chip fails one of the cold final tests (step 330), thefailed test numbers are stored in database 130 (step 210), and thememory chip is set aside for repair (step 345). If there are any otherchips to be tested (step 215) then testing of these chips continues withstep 300. Otherwise, tests are selected, using criteria such as thatdiscussed above, and repeated (step 350). Any detected failed bits ormemory cells are identified and cold repaired (step 355). As notedabove, preferably 32 chips are repaired at a time.

During the repair step identified failed bits or memory cells arerepaired by replacing them with redundant bits or memory cells. Therepaired chip is then preferably re-tested.

The memory chip is determined to be a good product when the memory chippasses all of the tests (step 340).

In an alternative embodiment all tests are performed before a failedmemory chip is set aside so that the list of failed tests in thedatabase is complete.

The present invention thus optimizes the testing and repair process forsemiconductor memory chips. The invention accomplishes this by onlyperforming redundancy analysis using a group of tests that a specificmemory chip or group of memory chips has failed.

The foregoing description of a preferred embodiment of the invention hasbeen presented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed, and modifications and variations are possible in light of theabove teachings or may be acquired from practice of the invention. Forexample, the present invention is not limited to testing and repair ofmemory chips, but any integrated circuit requiring testing and repair.The embodiment was chosen and described in order to explain theprinciples of the invention and its practical application to enable oneskilled in the art to utilize the invention in various embodiments andwith various modifications as are suited to the particular usecontemplated. It is intended that the scope of the invention be definedby the claims appended hereto, and their equivalents.

1. A method for testing a plurality of integrated circuits, includingthe steps of: performing a plurality of tests on the plurality ofintegrated circuits, each of said integrated circuits having a uniqueidentifier stored in a machine readable device; identifying integratedcircuits that failed at least one of the plurality of tests by readingsaid unique identifier and identifying tests failed by the integratedcircuits; and for each of said plurality of integrated circuits whichhas failed at least one of the plurality of tests, creating a set of atleast one test as a function of the unique identifier of a failedintegrated circuit and repeating said set of at least one test on thefailed integrated circuit.
 2. The method of claim 1, wherein saidmachine readable device is a set of anti-fuses and said uniqueidentifier is read by reading said set of anti-fuses.
 3. The method ofclaim 1, wherein said machine readable device is a non-volatile memorycircuit and said unique identifier is read by reading said non-volatilememory circuit.
 4. The method of claim 3, wherein said non-volatilememory circuit is a FLASH memory circuit and said unique identifier isread by reading said FLASH memory circuit.
 5. The method of claim 3,wherein said non-volatile memory circuit is an electrical programmableread only memory (EPROM) circuit and said unique identifier is read byreading said EPROM memory circuit.
 6. The method of claim 3, whereinsaid non-volatile memory circuit is a read only memory (ROM) circuit andsaid unique identifier is read by reading said ROM memory circuit. 7.The method of claim 1, wherein said machine readable device is a contentaddressable memory circuit (CAM) and said unique identifier is read byreading said CAM memory circuit.
 8. An apparatus for testing a pluralityof integrated circuits, comprising: means for performing a plurality oftests on the plurality of integrated circuits; means for reading aunique identifier from each integrated circuit that failed at least oneof the plurality of tests and identifying tests failed by the integratedcircuits; and means for repeating at least one identified failed test oneach of the integrated circuits which failed at least one test.
 9. Theapparatus of claim 8, wherein said means for reading comprises a circuitfor reading the unique identifier from a set of anti-fuses.
 10. Theapparatus of claim 8, wherein said means for reading comprises a circuitfor reading the unique identifier from a non-volatile memory.
 11. Theapparatus of claim 10, wherein said means for reading comprises acircuit for reading the unique identifier from a FLASH memory.
 12. Theapparatus of claim 10, wherein said means for reading comprises acircuit for reading the unique identifier from an electricalprogrammable read only memory (EPROM).
 13. The apparatus of claim 10,wherein said means for reading comprises a circuit for reading theunique identifier from a read only memory (ROM).
 14. The apparatus ofclaim 8, wherein said means for reading comprises a circuit for readingthe unique identifier from a content addressable memory (CAM).
 15. Anapparatus for testing a plurality of integrated circuits, said apparatuscomprising: a testing device for performing a plurality of tests on saidplurality of integrated circuits, each of said plurality of integratedcircuits having a unique circuit identifier stored in an identificationcircuit; a processor to control said testing device, said processoridentifying each of said plurality of integrated circuits that failed atleast one of said plurality of tests and identifying tests failed byeach of said plurality of integrated circuits; and a memory for storingsaid unique circuit identifier for each of said plurality of integratedcircuits that failed at least one of said plurality of tests, whereinsaid testing device repeats at least one identified failed test on eachof the integrated circuits that failed at least one of said plurality oftests.
 16. The apparatus of claim 15, wherein said identificationcircuit is a set of anti-fuses.
 17. The apparatus of claim 15, whereinsaid identification circuit is a non-volatile memory.
 18. The apparatusof claim 17, wherein said non-volatile memory is a FLASH memory.
 19. Theapparatus of claim 17, wherein said non-volatile memory is an electricalprogrammable read only memory (EPROM).
 20. The apparatus of claim 17,wherein said non-volatile memory is a read only memory (ROM).
 21. Theapparatus of claim 15, wherein said identification circuit is a contentaddressable memory (CAM).
 22. A system comprising: a device testeradapted to perform a principal functional test on an integrated circuithaving one or more functional circuit portions and produce principalresult information indicating respective operation or failure of saidone or more functional circuit portions; a reader adapted to read anidentification device on said integrated circuit so as to ascertain anidentity of said integrated circuit; a recording medium adapted torecord said identity and said result information and maintain anassociation therebetween; and a device repair apparatus adapted torepair said integrated circuit in response to principle resultinformation indicating failure of said one or more functional circuitportions.
 23. The system of claim 22, wherein said identification deviceis a set of anti-fuses.
 24. The system of claim 22, wherein saididentification device is a non-volatile memory.
 25. The system of claim24, wherein said non-volatile memory is a FLASH memory.
 26. The systemof claim 24, wherein said non-volatile memory is an electricalprogrammable read only memory (EPROM).
 27. The system of claim 24,wherein said non-volatile memory is a read only memory (ROM).
 28. Thesystem of claim 22, wherein said identification device is a contentaddressable memory (CAM).